Title :
Electronic component response to energetic heavy ions
Author :
Patin, Y. ; Lochard, J.P. ; Gosselin, G.
Author_Institution :
Service de Phys. et Tech. Nucl., CEA Centre d´´etude de Bruyeres-le-Chatel, France
Abstract :
Charge collection in electronic circuits struck by heavy ions ranging from 1 MeV/A to 600 MeV/A is experimentally studied. Data are discussed in terms of collection depth as a function of ion range and LET. Energy deposited by relativistic (>100 MeV/A) heavy ions in thin silicon detectors or in the circuits differs from the one calculated by energy loss. This effect is discussed and compared with simplified model calculations proposed by M.A. Xapsos (see IEEE Trans. Nucl. Sci, vol. NS-39, p. 1613-21, 1992)
Keywords :
ion beam effects; monolithic integrated circuits; semiconductor devices; LET; Si; charge collection; collection depth; electronic circuits; electronic component response; energetic heavy ions; energy loss; ion range; model calculations; thin Si detectors; Cows; Detectors; Diodes; Electronic circuits; Electronic components; Energy loss; Resumes; Satellites; Silicon; Vents;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316558
