Title :
Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs
Author :
Roubaud, Franck ; Dachs, Charles ; Palau, Jean-Marie ; Gasiot, Jean ; Tastet, Pierre
Author_Institution :
Centre d´´Electron. de Montpellier, France
Abstract :
Heavy-ion-induced effects on a power MOSFET cell are simulated with the 2D software MEDICI. The effect on single event burnout (SEB) sensitivity of several parameters (impact position, incidence angle, V DS bias voltage, LET of the incident particle, etc...) is analysed
Keywords :
digital simulation; electrical faults; electronic engineering computing; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; 2D simulation; 2D software; MEDICI; NMOSFET; SEB occurrence; SEB sensitivity; bias voltage; heavy-ion-induced effects; impact position; incidence angle; n-channel MOSFETs; power MOSFET cell; single event burnout; Boundary conditions; Charge carrier processes; Circuit simulation; Impurities; MOSFETs; Medical simulation; Poisson equations; Resistors; Taste buds; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316561
