Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETs

Author

Johnson, Gregory H. ; Brews, John R. ; Schrimpf, Ronald D. ; Galloway, Kenneth F.

Author_Institution

Phillips Lab./VTE, Kirtland AFB, NM, USA

fYear

1993

fDate

13-16 Sep 1993

Firstpage

441

Lastpage

445

Abstract

For the first time, this paper investigates the time-dependent mechanisms involved in single-event burnout (SEB). SEB of power metal-oxide-semiconductor field-effect transistors (MOSFETs)is a catastrophic failure mechanism initiated by the passage of a heavy ion through the device structure. In previous work, analytical models have been developed to explain the regenerative feedback mechanism that induces second breakdown of the parasitic bipolar junction transistor (BJT). In this paper, a first order dynamic model is presented to lend insight into the turn-on of the parasitic BJT by the heavy ion

Keywords

electric breakdown of solids; electrical faults; equivalent circuits; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; NMOSFET; catastrophic failure mechanism; field-effect transistors; first order dynamic model; heavy ion penetration; n-channel power MOSFETs; parasitic BJT turnon; parasitic bipolar junction transistor; regenerative feedback mechanism; second breakdown; single-event burnout; time-dependent turn-on mechanism; Analytical models; Bipolar transistors; Councils; FETs; Feedback; Forward contracts; Laboratories; MOSFETs; Turning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316562

Filename

316562