Title :
Low-voltage and high-speed operation for high-density SRAMs by BBC cell
Author :
Maki, Y. ; Honda, H. ; Morimoto, R. ; Sato, H. ; Nagaoka, H. ; Wada, T. ; Arita, Y. ; Tsutsumi, K. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We propose a novel SRAM cell, a Bipolar Bitline Contact (BBC) cell, for low-voltage and high-speed operation of high-density SRAMs. In the BBC cell, a bipolar transistor is formed between an access transistor and a bitline to amplify the cell current; it operates at high-speed even at a low voltage of 1.5 V. Although the number of elements in the cell is increased from six to eight, we have achieved a 16% smaller cell size.
Keywords :
MOS memory circuits; SRAM chips; equivalent circuits; 1.5 V; BBC cell; NMOS transistor; bipolar bitline contact cell; bipolar transistor; cell current amplification; high-density SRAMs; high-speed operation; low-voltage operation; Bipolar transistors; Driver circuits; Equivalent circuits; Laboratories; Low voltage; Personal digital assistants; Power supplies; Random access memory; Thin film transistors; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650516
