Title :
Single Event Latchup (SEL) in IDT 7187 SRAMs-dependence on ion penetration depth
Author :
Levinson, J. ; Even, O. ; Adler, E. ; Hass, M. ; Ilberg, D. ; Lifshitz, Y.
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
Abstract :
A study of Single Event Latchup (SEL) in IDT 7187 SRAMs is reported. Two important measurements concerning heavy ion SEL were demonstrated: (i) the dependence of the SEL cross section on the ion penetration depth, (ii) the latchup current distribution which can serve for the study of latchup paths. For IDT 7187, the measurements show a sharp decrease in the SEL cross section for penetration depths below ~15 μm. The latchup current distribution reveals the existence of two main latchup paths. The importance of the present results for further studies is discussed
Keywords :
CMOS integrated circuits; SRAM chips; current distribution; electrical faults; ion beam effects; CMOS static RAM; IDT 7187 SRAMs; heavy ion SEL; ion penetration depth; latchup current distribution; single event latchup; Circuits; Colliding beam accelerators; Current distribution; Current measurement; Gold; Ion accelerators; Iron; Particle accelerators; Testing; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316563
