Title :
A new method for determining the transient photocurrent in an irradiated diode
Author :
Bruguier, G. ; Pelanchon, F. ; Sudre, C. ; Moreau, Y. ; La Rochette, H.D. ; Baggio, J. ; Gasiot, J. ; Azais, B.
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
An analytical expression of the photocurrent in a n-p junction exposed to an ionizing radiation pulse is derived by using a specific decomposition of the minority carrier density. Modeling can be applied to any shape of actual radiation pulses, in particular with significant rise times. Comparisons with experiments and numerical resolutions have shown the validity of the modeling
Keywords :
carrier density; minority carriers; photoconductivity; radiation effects; semiconductor device models; semiconductor diodes; transients; ionizing radiation pulse; irradiated diode; minority carrier density; modeling; n-p junction; transient photocurrent; Boundary conditions; Charge carrier density; Charge carrier lifetime; Diodes; Equations; Integrated circuit modeling; Ionizing radiation; Photoconductivity; Predictive models; Pulse shaping methods;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316566
