Title :
Radiation-induced dark current increases in CCDs
Author_Institution :
Sira Ltd., Chislehurst, UK
Abstract :
Results are presented on ionization and displacement damage-induced dark current increases in CCDs. Effects of reverse annealing and operation in surface inversion (dither clocking and MPP mode) are discussed. Bulk damage effects such as field enhancement and random telegraph noise are also considered. The emphasis is on effects in the near-Earth space environment
Keywords :
CCD image sensors; annealing; gamma-ray effects; proton effects; CCDs; MPP mode; bulk damage effects; displacement damage; dither clocking; field enhancement; image sensors; ionization; near-Earth space environment; radiation-induced dark current; random telegraph noise; reverse annealing; surface inversion; Annealing; Charge coupled devices; Clocks; Dark current; Electron traps; Ionization; Pixel; Proton accelerators; Silicon; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316569
