DocumentCode
2004414
Title
Radiation-induced dark current increases in CCDs
Author
Hopkinson, G.R.
Author_Institution
Sira Ltd., Chislehurst, UK
fYear
1993
fDate
13-16 Sep 1993
Firstpage
401
Lastpage
408
Abstract
Results are presented on ionization and displacement damage-induced dark current increases in CCDs. Effects of reverse annealing and operation in surface inversion (dither clocking and MPP mode) are discussed. Bulk damage effects such as field enhancement and random telegraph noise are also considered. The emphasis is on effects in the near-Earth space environment
Keywords
CCD image sensors; annealing; gamma-ray effects; proton effects; CCDs; MPP mode; bulk damage effects; displacement damage; dither clocking; field enhancement; image sensors; ionization; near-Earth space environment; radiation-induced dark current; random telegraph noise; reverse annealing; surface inversion; Annealing; Charge coupled devices; Clocks; Dark current; Electron traps; Ionization; Pixel; Proton accelerators; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316569
Filename
316569
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