Effect of light intensity and temperature on the performance of GaN-based p-i-n solar cells

The effect of light intensity and temperature on the performance of InGaN solar cells were investigated experimentally. With the increase of light intensity, the short circuit current density (J_sc) increases linearly and the open circuit voltage (V_oc) increases logarithmically. The filling factor (FF) and relative efficiency (η), however, increase first and then decrease which is explained by the loss coming from the electrical series resistance under higher light intensity. With the increase of temperature, on the other hand, the performance of the solar cell becomes worse. This paper provides useful information concerning the reliability of GaN-based solar cells.