A high density 1T/2C cell with Vcc/2 reference level for high stable FeRAMs

Author

Tanabe, N. ; Kobayashi, S. ; Hada, H. ; Kunio, T.

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

863

Lastpage

866

Abstract

A one transistor and two ferroelectric-capacitors (1T/2C) cell with Vcc/2 reference voltage level has been developed for high stable operation of ferroelectric nonvolatile memories (FeRAMs). The fixed reference voltage scheme creates a large sensing margin between the reference voltage and signal voltage, resulting into stable operation. 8F/sup 2/ (F: feature size) cell area for the 1T/2C cell is as small as a 1T/1C cell because smaller capacitance value of 1T/2C cell than that of 1T/1C is acceptable for a stable operation. The structure is promising for high density FeRAMs.

Keywords

ferroelectric capacitors; ferroelectric storage; integrated memory circuits; random-access storage; stability; NVRAMs; ferroelectric capacitors; ferroelectric nonvolatile memories; fixed reference voltage level; high density 1T/2C cell; high density memories; high stability operation; sensing margin; Capacitance; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650517

Filename

650517