Title :
Impact of gate driver signal on static losses for a SiC switch built with Normally-Off JFETs and a Schottky diode
Author :
Fonteneau, Xavier ; Morel, Florent ; Morel, Hervé ; Lahaye, Philippe ; Rondon-Pinilla, Eliana
Author_Institution :
Lab. Ampere, Univ. de Lyon, Villeurbanne, France
Abstract :
This document shows the behaviour of a SiC switch built with Normally-Off JFETs and a Schottky diode when the JFETs are controlled with a constant gate-to-source voltage or with a constant gate current. The JFETs are used in a direct and reverse conduction. The goal of this study is to determine a gate driver signal that minimizes static losses in the switch in spite of temperature variations. Two switches are tested: the first one is built with one JFET and one diode, the second one is built with four JFETs and one diode. It has been shown that in both cases, when reverse conduction is used, a current controlled gate driver leads to lower static losses.
Keywords :
Schottky diodes; junction gate field effect transistors; Schottky diode; SiC switch; constant gate current; constant gate-to-source voltage; gate driver signal; normally-off JFET; reverse conduction; static losses; temperature variations; JFETs; Logic gates; Schottky diodes; Silicon carbide; Switches; Voltage control; Normally-Off SiC JFET; current injection; gate control; reverse conduction;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342636
