Impact of gate driver signal on static losses for a SiC switch built with Normally-Off JFETs and a Schottky diode

Author

Fonteneau, Xavier ; Morel, Florent ; Morel, Hervé ; Lahaye, Philippe ; Rondon-Pinilla, Eliana

Author_Institution

Lab. Ampere, Univ. de Lyon, Villeurbanne, France

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

1503

Lastpage

1508

Abstract

This document shows the behaviour of a SiC switch built with Normally-Off JFETs and a Schottky diode when the JFETs are controlled with a constant gate-to-source voltage or with a constant gate current. The JFETs are used in a direct and reverse conduction. The goal of this study is to determine a gate driver signal that minimizes static losses in the switch in spite of temperature variations. Two switches are tested: the first one is built with one JFET and one diode, the second one is built with four JFETs and one diode. It has been shown that in both cases, when reverse conduction is used, a current controlled gate driver leads to lower static losses.

Keywords

Schottky diodes; junction gate field effect transistors; Schottky diode; SiC switch; constant gate current; constant gate-to-source voltage; gate driver signal; normally-off JFET; reverse conduction; static losses; temperature variations; JFETs; Logic gates; Schottky diodes; Silicon carbide; Switches; Voltage control; Normally-Off SiC JFET; current injection; gate control; reverse conduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342636

Filename

6342636