Title :
Asymmetrical irradiation effects in SIMOX MOSFETs
Author :
Cristoloveanu, Sorin ; Ioannou, Dimitris E. ; Lawrence, Reed K. ; Campisi, George J. ; Hughes, Harold L.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
Abstract :
Radiation tests on SIMOX MOSFETs were conducted with a 5 V bias applied to the drain during irradiation. This resulted in a non-uniform defect distribution along the channel, with the interface region near the drain more heavily damaged. The generated defects were mainly hole traps in the buried oxide and fast states at the front interface. Multiple implantation and capless annealing appear to improve the radiation hardness of SIMOX MOSFETs
Keywords :
SIMOX; annealing; hole traps; insulated gate field effect transistors; ion implantation; radiation effects; semiconductor device testing; 5 V; SIMOX MOSFETs; asymmetrical irradiation effects; capless annealing; drain bias; fast states; hole traps; interface region; multiple implantation; nonuniform defect distribution; radiation hardness; radiation tests; Annealing; Charge measurement; Charge pumps; Current measurement; Degradation; MOSFETs; Silicon on insulator technology; Substrates; Testing; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316573
