DocumentCode :
2004562
Title :
GaAs Monolithic Direct Linear (1 - 2.8) GHz Q.P.S.K. Modulator
Author :
Pyndiah, Ramesh ; Jean, Patrick ; Leblanc, Remy ; Meunier, Jean-Christophe
fYear :
1989
fDate :
4-7 Sept. 1989
Firstpage :
597
Lastpage :
602
Abstract :
Monolithic 1-2.8 GHz linear "Quaternary phase Shift Keying" modulators have been designed and fabricated with the standard D07A process of the PHILIPS MICROWAVE GaAs MMIC Foundry. Output power of the modulator is a dBm with third order intermodulation signals more than 41 dBc. Carrier rejection and Band rejection of more than 45 dBc have been measured corresponding to a maximum amplitude and phase error of less than 0.12 dB and 0.8° respectively.
Keywords :
Circuits; FETs; Foundries; Gallium arsenide; MMICs; Phase modulation; Power generation; Quadrature amplitude modulation; Quadrature phase shift keying; Signal generators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
Type :
conf
DOI :
10.1109/EUMA.1989.334033
Filename :
4132745
Link To Document :
بازگشت