Title :
A detailed hardness evaluation of HCMOS devices
Author :
David, J.P. ; Mondot, E. ; Villard, L.
Author_Institution :
ONERA-CERT, Toulouse, France
Abstract :
Experimental conditions have been established to achieve Radiation Verification Tests on non-hardened ICs. A realistic and conservative hardness evaluation of these devices has been carried out using a low dose rate irradiation and a 168 h/100°C annealing procedure. Most of the device types satisfied the conditions for a 20 krad application but a “super rebound” exceeding the maximum values ever seen appeared on one device type
Keywords :
CMOS integrated circuits; annealing; integrated circuit testing; integrated logic circuits; radiation effects; 100 degC; 168 h; 20 krad; HCMOS devices; annealing procedure; logic family; low dose rate irradiation; radiation hardness evaluation; radiation verification tests; super rebound; Annealing; Current supplies; Degradation; Instruments; Interface states; Laboratories; MOS devices; Space technology; Testing; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316576
