• DocumentCode
    2004595
  • Title

    Comparative effect of gamma total dose on surface mount and non surface mount bipolar transistors

  • Author

    Dowling, S.

  • Author_Institution
    R. Mil. Coll. of Sci., Shrivenham, UK
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    338
  • Lastpage
    343
  • Abstract
    High gain silicon NPN transistors in an SOT23 package are found to show up to 50% loss in gain at doses as low as 30Gy(Si). Devices of similar construction in conventional packages, showed significantly less degradation. The devices tested were all NPN epitaxial type transistors with hEE (small signal current gain) in the range 250-2000. Measurements were made for total doses in the range 25-100Gy(Si). No annealing was observed over a period of a few days
  • Keywords
    bipolar transistors; gamma-ray effects; semiconductor device testing; surface mount technology; 25 to 100 Gy; NPN transistors; SOT23 package; Si; bipolar transistors; degradation; epitaxial type transistors; gamma total dose; small signal current gain; surface mount; Annealing; Bipolar transistors; Circuits; Degradation; Educational institutions; Interface states; Ionizing radiation; Packaging; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
  • Conference_Location
    St. Malo
  • Print_ISBN
    0-7803-1793-9
  • Type

    conf

  • DOI
    10.1109/RADECS.1993.316577
  • Filename
    316577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2004595