Title :
Comparative effect of gamma total dose on surface mount and non surface mount bipolar transistors
Author_Institution :
R. Mil. Coll. of Sci., Shrivenham, UK
Abstract :
High gain silicon NPN transistors in an SOT23 package are found to show up to 50% loss in gain at doses as low as 30Gy(Si). Devices of similar construction in conventional packages, showed significantly less degradation. The devices tested were all NPN epitaxial type transistors with hEE (small signal current gain) in the range 250-2000. Measurements were made for total doses in the range 25-100Gy(Si). No annealing was observed over a period of a few days
Keywords :
bipolar transistors; gamma-ray effects; semiconductor device testing; surface mount technology; 25 to 100 Gy; NPN transistors; SOT23 package; Si; bipolar transistors; degradation; epitaxial type transistors; gamma total dose; small signal current gain; surface mount; Annealing; Bipolar transistors; Circuits; Degradation; Educational institutions; Interface states; Ionizing radiation; Packaging; Silicon; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316577
