Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process

Author

Matsumura, Takeshi ; Esashi, Masayoshi ; Harada, Hiroshi ; Tanaka, Shuji

Author_Institution

New Generation Wireless, Commun. Res. Center, NICT, Yokosuka, Japan

fYear

2009

fDate

20-23 Sept. 2009

Firstpage

2141

Lastpage

2144

Abstract

A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.

Keywords

CMOS analogue integrated circuits; MMIC; aluminium compounds; channel bank filters; cognitive radio; crystal resonators; elemental semiconductors; large scale integration; micromechanical resonators; mobile handsets; radiofrequency filters; silicon; AlN resonator; AlN-Si; CMOS-compatible process; LSI; center frequency; cognitive wireless technology; compact multiband RF front-end architecture; composite piezoelectric MEMS resonators; disk-type resonators; dummy Si wafer; film bulk acoustic resonators; frequency 292.8 MHz; frequency 7.71 GHz; ladder-type FBAR filter; mechanically-coupled disk-array filter; mobile phones; multiband RF filter bank; Electrodes; Film bulk acoustic resonators; Filter bank; Large scale integration; Plasma applications; Plasma properties; Radio frequency; Resonator filters; Sputter etching; Wireless communication; CMOS-MEMS; FBAR; RF MEMS; disk-type resonator; multi-band filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2009 IEEE International

Conference_Location

Rome

ISSN

1948-5719

Print_ISBN

978-1-4244-4389-5

Electronic_ISBN

1948-5719

Type

conf

DOI

10.1109/ULTSYM.2009.5442012

Filename

5442012