Title :
Assessment of quantum yield experiments via full band Monte Carlo simulations
Author :
Ghetti, A. ; Alam, M.A. ; Bude, J. ; Venturi, F.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper we present an in-depth analysis of Quantum Yield (QY) data by means of Full Band Monte Carlo (FBMC) simulation including data from stressed oxides. The effect of device structure and initial energy distribution on QY efficiency is explored and the consequences of oxide stress on QY data are analyzed. In particular, we show that: (a) there is universal shape for QY curves in fresh oxides independent of oxide thickness and substrate doping; (b) QY data can be used to gain important insight into possible Stress Induced Leakage Current (SILC) mechanisms and discriminate between different SILC models.
Keywords :
Monte Carlo methods; carrier relaxation time; leakage currents; semiconductor device models; simulation; tunnelling; MOSFET; SILC mechanisms; SILC models; device structure; full band Monte Carlo simulations; initial energy distribution; quantum yield experiments; stress induced leakage current; stressed oxide data; Analytical models; Charge carrier processes; Computational modeling; Data analysis; Electric breakdown; Electron traps; MOSFET circuits; Particle scattering; Silicon; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650519
