Title :
L-band 20 watts GaAs FET amplifier for on-board digital mobile satellite systems
Author :
Robertson, I.D. ; Cheng, K.K.M. ; Aghvami, A.H.
Author_Institution :
Commun. Res. Group, King´´s Coll. London, UK
Abstract :
The design and measured performance of a GaAs FET amplifier developed for use onboard an experimental digital mobile satellite system are presented. The required 20 W output power is achieved with 26% power-added efficiency and 0.3 degrees/dB AM-to-PM conversion coefficient. The power spectrum of a bandlimited QPSK (quaternary-phase-shift keying) signal measured at the output of the amplifier shows an acceptable restoration of the filtered sidelobes. The bit error rate performance of the system obtained by computer simulation shows a very small E/sub b//N/sub 0/ degradation due to the high-power amplifier nonlinearities.<>
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; mobile radio systems; power amplifiers; satellite relay systems; solid-state microwave circuits; 20 W; FET amplifier; GaAs; L-band; bandlimited QPSK signal; bit error rate; digital mobile satellite systems; high power amplifier; microwave amplifier; onboard processing; power spectrum; quaternary-phase-shift keying; Bit error rate; FETs; Gallium arsenide; Power amplifiers; Power generation; Power measurement; Power system restoration; Quadrature phase shift keying; Satellites; Signal restoration;
Conference_Titel :
Communications, 1988. ICC '88. Digital Technology - Spanning the Universe. Conference Record., IEEE International Conference on
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ICC.1988.13622
