Title :
Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter
Author :
Laux, S.E. ; Fischetti, M.V.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The role of steady-state and transient velocity overshoot in switching an unloaded 0.1-micron CMOS inverter is evaluated for the first time using Monte Carlo device simulation. Our results indicate switching times decrease by /spl sim/1 psec for MC versus DD modeling. Unfortunately, no evidence is found that transient velocity overshoot contributes to this decrease in switching times.
Keywords :
CMOS logic circuits; Monte Carlo methods; equivalent circuits; integrated circuit modelling; logic gates; semiconductor device models; switching; transient analysis; 0.1 micron; CMOS inverter; Monte Carlo device simulation; steady-state overshoot; switching time reduction; transient overshoot; velocity overshoot; Capacitance; Delay effects; Doping; Inverters; MOSFET circuits; Monte Carlo methods; Scattering; Solids; Steady-state; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650521
