Title :
A Mesfet Sampler with 20 Picosecond Step Response Time
Author :
Hafdallah, H. ; Vernet, G. ; Adde, R.
Abstract :
A picosecond GaAs MESFET sampling gate employing a NEC710 as a resistive switch is designed and tested in hybrid technology. The 10-90% transition duration of the step response is 22ps. The dynamic operation is studied with a precise determination of transmitted and reflected picosecond waveforms at the different ports of the circuit during the capture of a single sample. Experimental results are analyzed using full time domain simulation of the circuit including propagation effects, measurement equipment responses.
Keywords :
Analytical models; Circuit simulation; Circuit testing; Delay; Gallium arsenide; MESFETs; Sampling methods; Switches; Time domain analysis; Time measurement;
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1989.334070