DocumentCode :
2005504
Title :
A Mesfet Sampler with 20 Picosecond Step Response Time
Author :
Hafdallah, H. ; Vernet, G. ; Adde, R.
fYear :
1989
fDate :
4-7 Sept. 1989
Firstpage :
827
Lastpage :
832
Abstract :
A picosecond GaAs MESFET sampling gate employing a NEC710 as a resistive switch is designed and tested in hybrid technology. The 10-90% transition duration of the step response is 22ps. The dynamic operation is studied with a precise determination of transmitted and reflected picosecond waveforms at the different ports of the circuit during the capture of a single sample. Experimental results are analyzed using full time domain simulation of the circuit including propagation effects, measurement equipment responses.
Keywords :
Analytical models; Circuit simulation; Circuit testing; Delay; Gallium arsenide; MESFETs; Sampling methods; Switches; Time domain analysis; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
Type :
conf
DOI :
10.1109/EUMA.1989.334070
Filename :
4132782
Link To Document :
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