Title :
10 GBit/s Word Generator Based on Silicon Bipolar Circuitry
Author :
Felder, A. ; Weger, P. ; Scheid, R. ; Ehinger, K. ; Bonek, E.
Author_Institution :
Institut fÿr Nachrichtentechnik und Hochfrequenztechnik, Technische Universitÿt Wien, GuÃ\x9fhausstr. 25, A-1040 Wien, Austria; Siemens AG, Corporate Research and Development, Micro-electronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, FRG
Abstract :
A 10 GBit/s word generator has been built around bipolar silicon circuitry. The basic data rate is tunable from about 100 Mbit/s. The maximum basic data rate is as high as 2.8 GBit/s, which is boosted by only two stages of 2:1 multiplexing to the new record value of 10 GBit/s.
Keywords :
Frequency conversion; Impedance; Lithography; Master-slave; Multiplexing; Resistors; Signal generators; Silicon; Tunable circuits and devices; Wires;
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1989.334071
