A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

Author

Graf, P. ; Bufler, F.M. ; Meinerzhagen, B. ; Jungemann, C.

Author_Institution

Bremen Univ., Germany

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

881

Lastpage

884

Abstract

A comprehensive and efficient Monte Carlo (MC) model for electrons and holes in strained SiGe is presented which is based on new theoretical and experimental results. The 2D device model for stationary and transient simulation of HBTs contains several new key features like, for example, an improved particle-mesh coupling method or a novel current evaluation scheme which yields solenoidal and statistically enhanced terminal currents. Quasiballistic transport is confirmed by MC simulations in the base/collector junction of modern narrow base HBTs and the breakdown of the CPU efficient drift-diffusion approximation is demonstrated.

Keywords

Ge-Si alloys; Monte Carlo methods; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; simulation; transient analysis; 2D device model; HBT model; SiGe; SiGe Monte Carlo model; base/collector junction; current evaluation scheme; drift-diffusion approximation; narrow base HBTs; particle-mesh coupling method; quasiballistic transport; stationary simulation; strained SiGe; transient 2D simulations; Bipolar transistors; Charge carrier processes; Electric breakdown; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Monte Carlo methods; Particle scattering; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650522

Filename

650522