A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror

Author

Carline, R.T. ; Hope, D.A.O. ; Nayar, V. ; Robbins, D.J. ; Stanaway, M.B.

Author_Institution

Defence Evaluation & Res. Agency, Malvern, UK

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

891

Lastpage

894

Abstract

We describe the fabrication, modelling and performance of a resonant cavity detector using epitaxial p-type SiGe/Si quantum wells grown over a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and has a black body responsivity comparable to current n-GaAs/AlGaAs detectors at /spl sim/1 V, making it suitable for integration in a monolithic Si-based focal plane array. Ways to improve the design are discussed.

Keywords

Ge-Si alloys; buried layers; cavity resonators; dark conductivity; elemental semiconductors; focal planes; infrared detectors; infrared imaging; mirrors; photodetectors; semiconductor device models; semiconductor materials; semiconductor quantum wells; silicon; 8 to 12 micron; SiGe-Si; WSi; black body responsivity; buried silicide mirror; epitaxial p-type SiGe-Si quantum wells; fabrication; focal plane array; high reflectance silicide layer; infrared photodetector; longwave IR SiGe/Si photodetector; modelling; monolithic Si-based FPA; resonant cavity detector; vertical cavity; Detectors; Fabrication; Germanium silicon alloys; Photodetectors; Reflectivity; Resonance; Semiconductor process modeling; Silicides; Silicon germanium; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650524

Filename

650524