• DocumentCode
    2006007
  • Title

    Component storage reliability evaluation method based on multi-performance parameters degradation analysis

  • Author

    Yang, Yang ; Fu, Guicui ; Wan, Bo ; Gu, Hantian

  • Author_Institution
    Dept. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
  • fYear
    2011
  • fDate
    24-25 May 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Aiming at the problem that traditional regression analysis can not reflect the randomness of performance degradation, which happened in the process of statistical analysis of component accelerated storage degradation test, the performance degradation process of the continuous cumulative damage degradation failure component is described by the stochastic process method. The component storage reliability models with the dependent and independent multi-performance parameters were established according to the analysis of the correlation among multi-performance parameters degradation, and the component storage reliability evaluation based on multi-performance parameters degradation was achieved. The method has been applied to the multi-performance parameters degradation analysis of a certain type of the tantalum capacitor and obtained the average storage life expectancy and the storage reliability of this type of the tantalum capacitor, which has certain practical value in engineering.
  • Keywords
    capacitors; failure analysis; regression analysis; reliability; stochastic processes; tantalum; Ta; capacitor; component accelerated storage degradation test; component storage reliability evaluation method; cumulative damage degradation failure component; multiperformance parameters degradation analysis; regression analysis; statistical analysis; stochastic process method; storage life expectancy; Analytical models; Degradation; Testing; parameters degradation; stochastic process; storage reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Prognostics and System Health Management Conference (PHM-Shenzhen), 2011
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-7951-1
  • Electronic_ISBN
    978-1-4244-7949-8
  • Type

    conf

  • DOI
    10.1109/PHM.2011.5939529
  • Filename
    5939529