DocumentCode
2006172
Title
Effect of cross-linking temperature on charge decay behavior in XLPE
Author
Gao, Y. ; Du, B.X. ; Ma, Z.L. ; Zhu, X.H.
Author_Institution
Sch. of Electr. Eng. & Autom., Tianjin Univ., Tianjin, China
fYear
2010
fDate
4-9 July 2010
Firstpage
1
Lastpage
4
Abstract
XLPE films were employed as test samples to investigate the effect of cross-linking temperature on space charge decay behavior. The samples were cross-linked with temperature ranged from 150°C to 180°C in thickness of 200 μm. Corona charging method was employed to introduce charges on sample surface, after which open-circuit decay test was carried out at 35°C with relative humidity of ~ 45%. Surface potential was measured by using an electrostatic probe, and mean decay rate of the charge was calculated. In addition, fourier-transform infrared (FTIR) spectroscopy was used to analyze the characteristic functional groups of byproducts that were generated in the cross-linking process within the samples. Obtained results show that with the increase of cross-linking temperature, mean decay rate of both negative charge and positive charge initially decreases then appears to increase. The decay behavior remarkably depends upon the polarity of charged particles. It is proposed that the charge decay dynamics is related to the content of cross-linking byproducts, namely acetophenone, cumyl alcohol and α-methylstyrene, which is varied as a function of the cross-linking temperature.
Keywords
Fourier transform spectroscopy; XLPE insulation; corona; space charge; temperature; Fourier transform infrared spectroscopy; XLPE; corona charging method; cross linking temperature; electrostatic probe; space charge decay; temperature 150 C to 180 C; Corona; Electric potential; Electrodes; Space charge; Surface charging; Surface discharges; Surface treatment; XLPE; byproducts; cross-linking temperature; decay; space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
Conference_Location
Potsdam
Print_ISBN
978-1-4244-7945-0
Electronic_ISBN
978-1-4244-7943-6
Type
conf
DOI
10.1109/ICSD.2010.5568230
Filename
5568230
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