Title :
Real-time health state assessment method for MOSFET based on time stress analysis
Author :
Kehong, Lv ; Jing, Qiu ; Guanjun, Liu ; Peng, Yang
Author_Institution :
Coll. of Mechatron. & Autom, Nat. Univ. of Defense Technol., Changsha, China
Abstract :
It has already been realized that the main external factor of MOSFET degradation or deviation from an expected normal condition is the time stress such as work and environment stresses. This paper introduced a real-time damage assessment method for MOSFET based on time stress analysis and failure models. And then, A health state assessment method was researched based on real-time damage information. The detailed process and algorithm of the method were studied based on neural network and fuzzy Choquet integral technologies. Finally, the validity of the method in this paper was proved by an experimental study of n-MOSFET.
Keywords :
MOSFET; electronic engineering computing; failure analysis; fuzzy systems; integral equations; neural nets; stress analysis; MOSFET; environment stress; failure models; fuzzy Choquet integral technology; neural network; real-time damage assessment method; real-time health state assessment method; time stress analysis; work stress; Analytical models; Biomedical monitoring; Failure analysis; MOSFET circuits; Monitoring; Stress; Accumulated damage; Fuzzy integral; Health state assessment; Time stress;
Conference_Titel :
Prognostics and System Health Management Conference (PHM-Shenzhen), 2011
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-7951-1
Electronic_ISBN :
978-1-4244-7949-8
DOI :
10.1109/PHM.2011.5939537
