DocumentCode :
2006236
Title :
A Novel DRAM Memory Cell with Inclined-Channel Transistor and Ring-like Structure Produced through Self-Aligned Storage Contact Process
Author :
Iguchi, K. ; Shinmura, N. ; Doi, T. ; Kakimoto, S. ; Kawamura, A. ; Yamazaki, O. ; Tabuchi, H. ; Fukushima, T. ; Mitsuhashi, K. ; Uda, K. ; Takagi, J.
Author_Institution :
Sharp Corporation, Japan
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
11
Lastpage :
12
Keywords :
Capacitance; Capacitors; Energy consumption; Etching; Insulation; Laboratories; Lithography; Random access memory; Transistors; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.705965
Filename :
705965
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2006236
