A Novel DRAM Memory Cell with Inclined-Channel Transistor and Ring-like Structure Produced through Self-Aligned Storage Contact Process

Author

Iguchi, K. ; Shinmura, N. ; Doi, T. ; Kakimoto, S. ; Kawamura, A. ; Yamazaki, O. ; Tabuchi, H. ; Fukushima, T. ; Mitsuhashi, K. ; Uda, K. ; Takagi, J.

Author_Institution

Sharp Corporation, Japan

fYear

1991

fDate

28-30 May 1991

Firstpage

Lastpage

Keywords

Capacitance; Capacitors; Energy consumption; Etching; Insulation; Laboratories; Lithography; Random access memory; Transistors; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

DOI

10.1109/VLSIT.1991.705965

Filename

705965

Link To Document