Title :
Advances in 1D and 2D thermoelectric materials
Author :
Dresselhaus, M.S. ; Lin, Y.M. ; Dresselhaus, G. ; Sun, X. ; Zhang, Z. ; Cronin, S.B. ; Koga, T. ; Ying, J.Y.
Author_Institution :
Dept. of Phys., MIT, Cambridge, MA, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
Recent advances in our understanding of 1D and 2D thermoelectric materials in the form of quantum wires (1D) and quantum wells (2D) are reviewed, with emphasis given to the physical mechanisms responsible for the enhanced thermoelectric figure of merit (ZT) in these low dimensional systems. Starting with 2D superlattices, progress in demonstrating proof-of-principle in the PbTe/Pb/sub 1-x/Eu/sub x/Te and Si/Si/sub 1-x/Ge/sub x/ systems is presented. The concept of carrier pocket engineering regarding improved thermoelectric performance for the whole superlattice Z/sub 3D/T, including both the quantum well and the barrier region, is reviewed. Particular attention is given to recent results obtained for 1D bismuth nanowire arrays and for individual Bi nanowires.
Keywords :
Ge-Si alloys; IV-VI semiconductors; bismuth; elemental semiconductors; europium compounds; lead compounds; nanostructured materials; quantum wires; reviews; semiconductor materials; semiconductor quantum wells; semiconductor quantum wires; semiconductor superlattices; silicon; thermoelectricity; 1D bismuth nanowire arrays; 1D thermoelectric materials; 2D superlattices; 2D thermoelectric materials; Bi; Bi nanowires; PbTe-PbEuTe; PbTe/Pb/sub 1-x/Eu/sub x/Te; Si-GeSi; Si/Si/sub 1-x/Ge/sub x/; carrier pocket engineering; low dimensional systems; quantum wells; quantum wires; review; thermoelectric figure of merit; Bismuth; Conducting materials; Magnetic materials; Quantum computing; Quantum dots; Quantum mechanics; Superlattices; Thermal conductivity; Thermoelectricity; Wires;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843342
