• DocumentCode
    2006438
  • Title

    Phonon-blocking electron-transmitting structures

  • Author

    Venkatasubramanian, R. ; Siivola, E. ; Colpitts, T. ; Quinn, B.O.

  • Author_Institution
    Res. Triangle Inst., Research Triangle Park, NC, USA
  • fYear
    1999
  • fDate
    Aug. 29 1999-Sept. 2 1999
  • Firstpage
    100
  • Lastpage
    103
  • Abstract
    We present the concept of phonon-blocking electron-transmitting structures, desirable for high-performance thermoelectric devices, with the measured properties of p-type Bi/sub 2/Te/sub 3//Sb/sub 2/Te/sub 3/ superlattice materials. Transmission electron microscopy data indicate that these superlattices are structurally nearly ideal; this is also supported by the in-plane carrier transport measurements which suggest that superlattices offer higher mobilities compared to alloy films. The cross-plane carrier transport has been evaluated by a transmission line model technique, adapted to measure the electrical conductivities normal to the plane of the thin films. From a phonon-transport point of view, the superlattices offer significantly reduced lattice thermal conductivities compared to that of alloys. Prototypal thermoelements have been prepared with these superlattice films and other reference materials. Peltier-effect differential temperatures in the range of 2 to 4K are inferred across the thermoelements during quasi-steady state current flow. Figure of merit (ZT), from isothermal cross-plane electrical resistivities and adiabatic Peltier voltages, in bulk, thin-film alloys, and superlattice thermoelements were /spl sim/1, /spl sim/0.4, and 1.6 to 3, respectively.
  • Keywords
    Peltier effect; antimony compounds; bismuth compounds; carrier mobility; interface structure; semiconductor materials; semiconductor superlattices; thermal conductivity; thermoelectricity; transmission electron microscopy; 2 to 4 K; Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/; Peltier-effect differential temperatures; adiabatic Peltier voltages; cross-plane carrier transport; electrical conductivities; high-performance thermoelectric devices; in-plane carrier transport; isothermal cross-plane electrical resistivities; lattice thermal conductivities; mobilities; p-type Bi/sub 2/Te/sub 3//Sb/sub 2/Te/sub 3/ superlattice materials; phonon-blocking electron-transmitting structures; quasi-steady state current flow; thermoelements; transmission electron microscopy; transmission line model; Bismuth; Conductivity measurement; Electron mobility; Superlattices; Tellurium; Thermal conductivity; Thermoelectric devices; Transistors; Transmission electron microscopy; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1999. Eighteenth International Conference on
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-5451-6
  • Type

    conf

  • DOI
    10.1109/ICT.1999.843343
  • Filename
    843343