Title :
Multilayer Vertical Stacked Capacitors (mvstc) for 64mbit and 256mbit Drams
Author_Institution :
Institute of Semiconductor Physics, Germany
Keywords :
Capacitance; Capacitors; Cleaning; Dielectrics; Doping; Etching; Nonhomogeneous media; Oxidation; Random access memory; Topology;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705966
