DocumentCode :
2006486
Title :
Multi-layer enhancement to polysilicon surface-micromachining technology
Author :
Sniegowski, J.J. ; Rodgers, M.S.
Author_Institution :
Dept. of Intelligent Micromachine, Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1997
fDate :
10-10 Dec. 1997
Firstpage :
903
Lastpage :
906
Abstract :
A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multilayer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.
Keywords :
annealing; elemental semiconductors; internal stresses; microactuators; micromachining; optical elements; optical fabrication; polishing; silicon; surface topography; Si; chemical-mechanical polishing; film deposition sequencing; film mechanical stress; geared power-transfer mechanisms; microactuators; multi-layer enhancement; optical elements; planarization; polysilicon surface-micromachining technology; surface topography; thermal anneals; Annealing; Chemical elements; Chemical technology; Microactuators; Nonhomogeneous media; Optical films; Planarization; Stress; Surface impedance; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4100-7
Type :
conf
DOI :
10.1109/IEDM.1997.650527
Filename :
650527
Link To Document :
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