• DocumentCode
    2006486
  • Title

    Multi-layer enhancement to polysilicon surface-micromachining technology

  • Author

    Sniegowski, J.J. ; Rodgers, M.S.

  • Author_Institution
    Dept. of Intelligent Micromachine, Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    903
  • Lastpage
    906
  • Abstract
    A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multilayer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.
  • Keywords
    annealing; elemental semiconductors; internal stresses; microactuators; micromachining; optical elements; optical fabrication; polishing; silicon; surface topography; Si; chemical-mechanical polishing; film deposition sequencing; film mechanical stress; geared power-transfer mechanisms; microactuators; multi-layer enhancement; optical elements; planarization; polysilicon surface-micromachining technology; surface topography; thermal anneals; Annealing; Chemical elements; Chemical technology; Microactuators; Nonhomogeneous media; Optical films; Planarization; Stress; Surface impedance; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650527
  • Filename
    650527