Title :
Structural and thermoelectric properties of pulsed laser deposited PbTe thin films
Author :
Lenoir, B. ; Jacquot, A. ; Boffoué, M.O. ; Scherrer, H. ; Dauscher, A. ; Stölzer, M.
Author_Institution :
Lab. de Phys. des Materiaux, Ecole des Mines, Nancy, France
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
PbTe thin films were prepared by pulsed laser deposition from a Nd:YAG laser (532 nm). The films were deposited onto glass substrates. Influence of deposition temperature (80-160/spl deg/C), fluence (5-13 J/cm/sup 2/) and nominal composition of the target on the chemical composition of the films was studied. It is found that the tellurium content of the film is strongly dependent on both the laser fluence and the deposition temperature. Highly textured stoichiometric films can be obtained under suitable conditions. Preliminary transport property measurements were performed on a 200 nm thick PbTe film.
Keywords :
IV-VI semiconductors; lead compounds; pulsed laser deposition; semiconductor growth; semiconductor thin films; texture; thermoelectricity; 200 nm; 80 to 160 degC; PbTe; chemical composition; deposition temperature; glass substrates; highly textured stoichiometric films; laser fluence; nominal composition; pulsed laser deposited PbTe thin films; structural properties; tellurium content; thermoelectric properties; transport property measurements; Chemical lasers; Glass; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Tellurium; Temperature dependence; Thermoelectricity; Thickness measurement;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843353
