Title :
Hot Carrier Degradation Mechanism Under Pulsed Stress in Mosfets
Author :
Nagai, R. ; Umeda, K. ; Takeda, E.
Author_Institution :
Central Research Laboratory, Japan
Keywords :
Acceleration; Channel hot electron injection; Degradation; Drain avalanche hot carrier injection; Frequency; Gold; Hot carriers; MOSFETs; Stress; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705967
