DocumentCode
2006854
Title
Thermoelectric figure of merit enhancement in Si and SiGe quantum wires due to spatial confinement of acoustic phonons
Author
Khitun, A. ; Balandin, A. ; Wang, K.L. ; Chen, G.
Author_Institution
Device Res. Lab., California Univ., Los Angeles, CA, USA
fYear
1999
fDate
Aug. 29 1999-Sept. 2 1999
Firstpage
181
Lastpage
184
Abstract
Thermoelectric figure of merit of Si and SiGe quantum wires was theoretically investigated rigorously taking into account spatial confinement of both electrons and phonons. The calculations were carried out for cylindrical quantum wires with radius 1.5 nm\n\n\t\t
Keywords
Ge-Si alloys; carrier mobility; electron-phonon interactions; elemental semiconductors; semiconductor quantum wires; silicon; thermal conductivity; thermoelectric power; 1.5 to 15 nm; Si; SiGe; acoustic phonons spatial confinement; carrier mobility; infinite potential barriers; lattice thermal conductivity; phonon relaxation rates; quantum wires; thermoelectric figure of merit; Carrier confinement; Electrons; Germanium silicon alloys; Lattices; Phonons; Quantum mechanics; Silicon germanium; Thermal conductivity; Thermoelectricity; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location
Baltimore, MD, USA
ISSN
1094-2734
Print_ISBN
0-7803-5451-6
Type
conf
DOI
10.1109/ICT.1999.843363
Filename
843363
Link To Document