• DocumentCode
    2006875
  • Title

    Influence of trapped backscattered electrons on parasitic oscillations in gyrotrons

  • Author

    Singh, Amarjit ; Herrmannsfeldt, William B.

  • Author_Institution
    Inst. for Res. in Electron. & App. Phys., Maryland Univ., College Park, MD
  • fYear
    2008
  • fDate
    22-24 April 2008
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    Trajectories of backscattered electrons have been studied, in respect of those electrons that transit through the rf cavity toward the MIG gun. They get reflected before they reach the cathode. On the return journey they can get reflected again from the collector region and thus get trapped. The transit back and forth through the rf cavity is a potential source of parasitic oscillations. An initial estimate of the oscillation frequency is in the range of tens of megahertz. Trapping can also take place between the cathode and the rf cavity, in which case the transit time will be less and the frequency higher than for the case of reflection back from the collector region.
  • Keywords
    cathodes; electron backscattering; gyrotrons; oscillations; MIG gun; cathode; collector region; gyrotrons; oscillation frequency; parasitic oscillations; reflection; rf cavity; trapped backscattered electrons; Cathodes; Educational institutions; Electron traps; Frequency estimation; Gyrotrons; Linear accelerators; Mirrors; Physics; Reflection; Vehicles; Gyrotrons; backscattered electrons; parasitic oscillations; trapped electrons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference, 2008. IVEC 2008. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-1715-5
  • Type

    conf

  • DOI
    10.1109/IVELEC.2008.4556487
  • Filename
    4556487