DocumentCode
2006875
Title
Influence of trapped backscattered electrons on parasitic oscillations in gyrotrons
Author
Singh, Amarjit ; Herrmannsfeldt, William B.
Author_Institution
Inst. for Res. in Electron. & App. Phys., Maryland Univ., College Park, MD
fYear
2008
fDate
22-24 April 2008
Firstpage
239
Lastpage
240
Abstract
Trajectories of backscattered electrons have been studied, in respect of those electrons that transit through the rf cavity toward the MIG gun. They get reflected before they reach the cathode. On the return journey they can get reflected again from the collector region and thus get trapped. The transit back and forth through the rf cavity is a potential source of parasitic oscillations. An initial estimate of the oscillation frequency is in the range of tens of megahertz. Trapping can also take place between the cathode and the rf cavity, in which case the transit time will be less and the frequency higher than for the case of reflection back from the collector region.
Keywords
cathodes; electron backscattering; gyrotrons; oscillations; MIG gun; cathode; collector region; gyrotrons; oscillation frequency; parasitic oscillations; reflection; rf cavity; trapped backscattered electrons; Cathodes; Educational institutions; Electron traps; Frequency estimation; Gyrotrons; Linear accelerators; Mirrors; Physics; Reflection; Vehicles; Gyrotrons; backscattered electrons; parasitic oscillations; trapped electrons;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2008. IVEC 2008. IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4244-1715-5
Type
conf
DOI
10.1109/IVELEC.2008.4556487
Filename
4556487
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