Title :
Thermal conductivity of Si/Ge superlattices
Author :
Borca-Tasciuc, Theodorian ; Liu, Weili ; Liu, Jianlin ; Zeng, Taofang ; Song, David W. ; Moore, Caroline D. ; Chen, Gang ; Wang, Kang L. ; Goorsky, Mark S. ; Radetic, Tamara ; Gronsky, Ronald ; Sun, Xiangzhong ; Dresselhaus, Mildred S.
Author_Institution :
Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.
Keywords :
X-ray diffraction; elemental semiconductors; germanium; semiconductor superlattices; silicon; thermal conductivity; transmission electron microscopy; 80 to 300 K; MBE; Si substrates; Si-Ge; Si/Ge superlattices; TEM; X-ray diffraction; comparative 3/spl omega/ method; dislocation density; graded buffer layer; thermal conductivity; Conducting materials; Conductivity measurement; Gallium arsenide; Materials science and technology; Molecular beam epitaxial growth; Superlattices; Temperature; Thermal conductivity; Thermal engineering; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843368
