Thermal conductivity of Si/Ge superlattices

Author

Borca-Tasciuc, Theodorian ; Liu, Weili ; Liu, Jianlin ; Zeng, Taofang ; Song, David W. ; Moore, Caroline D. ; Chen, Gang ; Wang, Kang L. ; Goorsky, Mark S. ; Radetic, Tamara ; Gronsky, Ronald ; Sun, Xiangzhong ; Dresselhaus, Mildred S.

Author_Institution

Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA

fYear

1999

fDate

Aug. 29 1999-Sept. 2 1999

Firstpage

201

Lastpage

204

Abstract

We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.

Keywords

X-ray diffraction; elemental semiconductors; germanium; semiconductor superlattices; silicon; thermal conductivity; transmission electron microscopy; 80 to 300 K; MBE; Si substrates; Si-Ge; Si/Ge superlattices; TEM; X-ray diffraction; comparative 3/spl omega/ method; dislocation density; graded buffer layer; thermal conductivity; Conducting materials; Conductivity measurement; Gallium arsenide; Materials science and technology; Molecular beam epitaxial growth; Superlattices; Temperature; Thermal conductivity; Thermal engineering; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1999. Eighteenth International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

1094-2734

Print_ISBN

0-7803-5451-6

Type

conf

DOI

10.1109/ICT.1999.843368

Filename

843368