• DocumentCode
    2006995
  • Title

    Radar Burn out Studies of Low Noise HEMTs and GaAs FETs

  • Author

    Gardner, P

  • Author_Institution
    FERRANTI INTERNATIONAL, POYNTON
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    1247
  • Lastpage
    1252
  • Abstract
    Measurements of gain recovery from overload and catastrophic burn out are described for a range of low noise HEMTs and GaAs FETs. The overload pulses used are simulated X-Band radar leakage pulses. The recovery results show similar recovery times for HEMT devices as for conventional GaAs FETs. The burn out results show burn out levels generally lower for HEMTs, but typically higher than about 40 nJ, making the devices viable for use in radar front end LNAs, assuming reasonable levels of front end protection.
  • Keywords
    Circuit testing; FETs; Gallium arsenide; HEMTs; MODFETs; Noise figure; Noise measurement; Pulse amplifiers; Pulse measurements; Radar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.334162
  • Filename
    4132849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2006995