DocumentCode
2007
Title
Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application
Author
Tobing, Landobasa Y. M. ; Tjahjana, Liliana ; Dao Hua Zhang
Author_Institution
Dept. of Microelectron., Nanyang Technol. Univ., Singapore, Singapore
Volume
13
Issue
3
fYear
2014
fDate
May-14
Firstpage
496
Lastpage
501
Abstract
This paper presents the capability of sonicated cold development process for sub-40-nm pitch metal dots patterning with potentially ~100 times shorter writing time, where lift-off pattern transfer of ~10-nm-sized metal dots at pitch as short as ~34 nm from 110-nm-thick positive-tone resist is demonstrated with good repeatability. Strategies to achieve sub-30-nm pitch are also discussed based on overlay nanofabrication approaches, which we believe could pave the way toward cost-effective 1 Tbit/in 2 bit-patterned-media patterning.
Keywords
electron beam lithography; nanofabrication; photoresists; electron beam lithography; low-cost bit patterned media patterning; overlay nanofabrication approaches; pitch metal dot patterning; positive-tone resist; size 110 nm; sonicated cold development process; Educational institutions; Gold; Nickel; Resists; Throughput; Writing; Bit patterned media (BPM); electron beam lithography (EBL); nanofabrication; sonicated cold development; sub-15-nm metal dots;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2307574
Filename
6747299
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