DocumentCode :
2007
Title :
Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application
Author :
Tobing, Landobasa Y. M. ; Tjahjana, Liliana ; Dao Hua Zhang
Author_Institution :
Dept. of Microelectron., Nanyang Technol. Univ., Singapore, Singapore
Volume :
13
Issue :
3
fYear :
2014
fDate :
May-14
Firstpage :
496
Lastpage :
501
Abstract :
This paper presents the capability of sonicated cold development process for sub-40-nm pitch metal dots patterning with potentially ~100 times shorter writing time, where lift-off pattern transfer of ~10-nm-sized metal dots at pitch as short as ~34 nm from 110-nm-thick positive-tone resist is demonstrated with good repeatability. Strategies to achieve sub-30-nm pitch are also discussed based on overlay nanofabrication approaches, which we believe could pave the way toward cost-effective 1 Tbit/in 2 bit-patterned-media patterning.
Keywords :
electron beam lithography; nanofabrication; photoresists; electron beam lithography; low-cost bit patterned media patterning; overlay nanofabrication approaches; pitch metal dot patterning; positive-tone resist; size 110 nm; sonicated cold development process; Educational institutions; Gold; Nickel; Resists; Throughput; Writing; Bit patterned media (BPM); electron beam lithography (EBL); nanofabrication; sonicated cold development; sub-15-nm metal dots;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2014.2307574
Filename :
6747299
Link To Document :
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