Title :
Growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/
Author :
Cho, Sunglae ; Kim, Yunki ; DiVenere, Antonio ; Wong, George K. ; Ketterson, John B. ; Meyer, Jerry R.
Author_Institution :
Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
We report that the layered structure of Bi/sub 2/Te/sub 3/-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi/sub 2/Te/sub 3/. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)/sub 2/Te/sub 3/ prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)/sub 2/Te/sub 3/. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/ thin films and compare their properties with conventional structures.
Keywords :
antimony compounds; band structure; bismuth compounds; molecular beam epitaxial growth; phonons; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; thermal conductivity; thermoelectricity; (BiSb)/sub 2/Te/sub 3/; MBE; artificially layered semiconductor; band structure; layer-by-layer growth; phonon scattering; thermal conductivity; thermoelectric properties; Bismuth; Lattices; Molecular beam epitaxial growth; Phonons; Scattering; Tellurium; Thermal conductivity; Thermal engineering; Thermoelectricity; Transistors;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843373
