Observations on frequency sensitivity of memristors

Comparison is made between established one dimensional linear and nonlinear memristor drift models with Hewlett Packard (HP) experimental data to test level of agreement. Models used in first phase of work are based on a sinusoidal applied voltage. Linear and nonlinear model data as well as HP experimental data were employed to make instantaneous power predictions during one full time cycle of the input waveform. Instantaneous power profile comparisons between both linear and nonlinear models for higher and lower frequencies with experimental data indicate that the power profiles are less sensitive to change in frequency though memristor hysteresis is highly sensitive. Model based simulation tests confirm that the frequency response scales inversely with an identified time constant based on physical properties and memristor dimensions.