DocumentCode
2007345
Title
An ultra low-power RF bipolar technology on glass
Author
Dekker, R. ; Baltus, P. ; van Deurzen, M. ; Einden, W.v.d. ; Maas, H. ; Wagemans, A.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
921
Lastpage
923
Abstract
We present a new technology, SOA (Silicon-On-Anything) to transfer circuits processed on SOI substrates to another substrate, e.g. glass or alumina. We have used this technology to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. Circuits with record low-power RF performance are demonstrated.
Keywords
bipolar analogue integrated circuits; inductors; integrated circuit technology; silicon-on-insulator; SOA technology; SOI substrate; Si-Al/sub 2/O/sub 3/; Silicon-On-Anything; alumina; glass; high-frequency process; passive component; spiral inductor; ultra low-power RF bipolar circuit; Capacitance; Circuit testing; Energy consumption; Fabrication; Glass; Inductors; Integrated circuit interconnections; Radio frequency; Silicon; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650531
Filename
650531
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