Title :
Structure Dependence of the Hot-Carrier Degraded Region in Deep Submicron MOS Devices
Author :
Harnada, A. ; Takeda, E.
Author_Institution :
Central Research Laboratory, Japan
Keywords :
Circuit synthesis; Degradation; Gold; Hot carrier injection; Hot carriers; Laboratories; MOS devices; MOSFETs; Stress; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705970
