DocumentCode
2007564
Title
Improved thermoelectric material of n-type based on (Bi,Sb)/sub 2/Te/sub 3/ for temperatures below 200 K
Author
Kutasov, V.A. ; Lukyanova, L.N. ; Konstantinov, P.P.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1999
fDate
Aug. 29 1999-Sept. 2 1999
Firstpage
332
Lastpage
335
Abstract
An application of Bi/sub 2-x/Sb/sub x/Te/sub 3/ solid solution for low temperature range (80 K\n\n\t\t
Keywords
Seebeck effect; antimony compounds; bismuth compounds; carrier mobility; semiconductor materials; thermal conductivity; thermoelectric power; (Bi,Sb)/sub 2/Te/sub 3/; (BiSb)/sub 2/Te/sub 3/; 80 to 200 K; Seebeck coefficient; charge carrier mobility; thermal conductivity; thermoelectric material; weak temperature dependence; Acoustic scattering; Bismuth; Charge carrier density; Doping; Scattering parameters; Solids; Tellurium; Temperature dependence; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location
Baltimore, MD, USA
ISSN
1094-2734
Print_ISBN
0-7803-5451-6
Type
conf
DOI
10.1109/ICT.1999.843397
Filename
843397
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