Title :
A High-Performance Sram Memory Cell with Ldd-Tft Loads
Author :
Tsutsumi, K. ; Inoue, Y. ; Murakami, S. ; Sakamoto, O. ; Ashida, M. ; Kohno, Y.
Author_Institution :
LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Japan
Keywords :
Electrodes; Impurities; Laboratories; Large scale integration; P-n junctions; Random access memory; Research and development; Stability; Thin film transistors; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705971
