DocumentCode :
2007722
Title :
Characterization of aluminum nitride lamb wave resonators operating at 600°C for harsh environment RF applications
Author :
Yen, Ting-Ta ; Lin, Chih-Ming ; Zhao, Xu ; Felmetsger, Valery V. ; Senesky, Debbie G. ; Hopcroft, Matthew A. ; Pisano, Albert P.
Author_Institution :
Univ. of California at Berkeley, Berkeley, CA, USA
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
731
Lastpage :
734
Abstract :
In this paper, aluminum nitride (AlN) Lamb wave resonators (LWR) operating in air from room temperature up to 600°C are demonstrated for the first time. To date, no AlN RF devices have been tested and characterized at extreme temperatures. This paper describes the design, fabrication and characterization of temperature compensated AlN Lamb wave resonators at 600°C. Temperature coefficients of frequency (TCF) of both uncompensated and compensated devices were measured. Quality factors against temperature were also recorded. This supports the use of piezoelectric AlN as the material platform for radio-frequency (RF) components and sensing applications in harsh environments.
Keywords :
Q-factor; compensation; radiofrequency integrated circuits; surface acoustic wave resonators; AlN; TCF; aluminum nitride lamb wave resonators; compensated devices; harsh environment RF devices; quality factors; temperature 293 K to 298 K; temperature 600 degC; temperature coefficients of frequency; temperature compensation; uncompensated devices; Aluminum nitride; Electrodes; Land surface temperature; Microsensors; Radio frequency; Rough surfaces; Surface discharges; Surface roughness; Surface texture; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442304
Filename :
5442304
Link To Document :
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