DocumentCode
2007739
Title
XPS study of oxidation process on Bi/sub 2/Te/sub 3/ surface
Author
Bando, H. ; Koizumi, K. ; Daikohara, K. ; Oikawa, Y. ; Kulbachinski, V.A. ; Ozaki, H.
Author_Institution
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
fYear
1999
fDate
Aug. 29 1999-Sept. 2 1999
Firstpage
359
Lastpage
362
Abstract
The oxidation process on the Bi/sub 2/Te/sub 3/ surface was investigated by X-ray photoelectron spectroscopy (XPS). The oxidized surface was found to have the Bi-O-Te structure with a definite thickness. The estimated oxide thicknesses from the XPS results were saturated at 1.5-2.0 nm, which was about two quintuple oxide layers thick in our oxide model. Experimental data were compared to a modified Cabrera-Mott oxidation rate model and the oxidation time dependence of the oxide thickness could be fitted very well.
Keywords
X-ray photoelectron spectra; bismuth compounds; oxidation; semiconductor materials; surface structure; Bi/sub 2/Te/sub 3/; XPS; modified Cabrera-Mott oxidation rate model; oxidation; oxide thickness; oxidized surface structure; time dependence; Atmosphere; Atmospheric measurements; Bismuth; Crystals; Energy measurement; Oxidation; Shape measurement; Tellurium; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location
Baltimore, MD, USA
ISSN
1094-2734
Print_ISBN
0-7803-5451-6
Type
conf
DOI
10.1109/ICT.1999.843404
Filename
843404
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