Title :
Theoretical modeling of thermoelectricity in Bi nanowires
Author :
Sun, X. ; Lin, Y.M. ; Cronin, S.B. ; Dresselhaus, M.S. ; Ying, J.Y. ; Chen, G.
Author_Institution :
Dept. of Phys., MIT, Cambridge, MA, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on the nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small (/spl les/10 nm) nanowire widths.
Keywords :
band structure; bismuth; carrier density; effective mass; nanostructured materials; quantum wires; thermoelectric power; Bi; Bi nanowires; Bi wire size; carrier concentration; electronic band structure; thermoelectric figure of merit; thermoelectricity; Bismuth; Charge carrier processes; Effective mass; Electrons; Ellipsoids; Nanowires; Potential well; Tensile stress; Thermoelectricity; Wire;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843413
