Investigation of the effect of Ga doping on the thermoelectric properties of the AlPdMn quasicrystalline system

Author

Winkler, D.W. ; Pope, A.L. ; Tritt, T.M. ; Fisher, I.R. ; Wiener, T.A. ; Canfield, P.C.

Author_Institution

Dept. of Phys. & Astron., Clemson Univ., SC, USA

fYear

1999

fDate

Aug. 29 1999-Sept. 2 1999

Firstpage

398

Lastpage

401

Abstract

Due to their inherently low thermal conductivity, quasicrystals show potential for thermoelectric applications. The AlPdMn quasicrystalline system has reasonable electrical conductivity and high thermopower. A quaternary variant of the ternary icosahedral Al-Pd-Mn system was prepared in order to investigate the effect of a fourth element (in this case Ga) on the electrical resistivity, thermoelectric power and thermal conductivity. Single grain samples of Al/sub 67/Ga/sub 4/Pd/sub 21/Mn/sub 8/ were prepared via a flux-growth technique and cut into several pieces. Thermal and electrical transport properties were measured on each sample over a broad range of temperature, 10 K\n\n\t\t

Keywords

aluminium alloys; electrical conductivity; gallium alloys; manganese alloys; palladium alloys; quasicrystals; thermal conductivity; thermoelectric power; 10 to 300 K; Al/sub 67/Ga/sub 4/Pd/sub 21/Mn/sub 8/; AlPdMn quasicrystalline system; Ga doping; high thermopower; low thermal conductivity; thermoelectric properties; Conducting materials; Crystalline materials; Doping; Power generation; Quasi-doping; Semiconductor materials; Temperature; Thermal conductivity; Thermal resistance; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1999. Eighteenth International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

1094-2734

Print_ISBN

0-7803-5451-6

Type

conf

DOI

10.1109/ICT.1999.843414

Filename

843414