• DocumentCode
    2007974
  • Title

    Hot-Carrier Induced Ion/ioff Improvement of Offset Pmos TFT

  • Author

    Furuta, H. ; Hayashi, F. ; Ohkawa, M. ; Shimizu, T. ; Ando, M. ; Inoue, Y. ; Sasaki, I.

  • Author_Institution
    NEC Corporation, Japan
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    27
  • Lastpage
    28
  • Keywords
    Annealing; Conductivity; Hot carrier effects; Hot carriers; National electric code; Power dissipation; Random access memory; Stability; Stress; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705973
  • Filename
    705973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2007974