DocumentCode :
2007974
Title :
Hot-Carrier Induced Ion/ioff Improvement of Offset Pmos TFT
Author :
Furuta, H. ; Hayashi, F. ; Ohkawa, M. ; Shimizu, T. ; Ando, M. ; Inoue, Y. ; Sasaki, I.
Author_Institution :
NEC Corporation, Japan
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
27
Lastpage :
28
Keywords :
Annealing; Conductivity; Hot carrier effects; Hot carriers; National electric code; Power dissipation; Random access memory; Stability; Stress; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.705973
Filename :
705973
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2007974
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