Title :
Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
Author :
Madhusoodhanan, Sachin ; Hatua, Kamalesh ; Bhattacharya, Subhashish ; Leslie, Scott ; Ryu, Sei-Hyung ; Das, Mrinal ; Agarwal, Anant ; Grider, David
Author_Institution :
FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; power MOSFET; power convertors; silicon; silicon compounds; wide band gap semiconductors; 3L-NPC VSC applications; 3L-NPC converter; MOSFET; Si; SiC; grid interface; low band gap energy; medium voltage power electronic applications; n-type IGBT; silicon IGBT device data; silicon carbide devices; three-level neutral point clamped voltage source converter; voltage 10 kV; voltage 12 kV; voltage 7.2 kV; Insulated gate bipolar transistors; Logic gates; MOSFET circuits; Silicon; Silicon carbide; Switches; Switching frequency;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342807
