Title :
Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy
Author :
Srnanek, R. ; Irmer, G. ; Záluský, R. ; Dubecký, F. ; Kúdela, R. ; Vincze, A. ; Novotný, I. ; John, J.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava
Abstract :
We present diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy, microphotoluminescence and SIMS methods. Bevelled form of the samples was used for the study. The thickness of the epitaxial LT GaAs layer with presence of high density of antisites AsGaAsand As excess was determined. Between InP substrate and LT GaAs layer an inter facial layer composed from InAs, InO and C was detected and studied
Keywords :
III-V semiconductors; Raman spectroscopy; epitaxial layers; gallium arsenide; indium compounds; interface structure; photoluminescence; secondary ion mass spectroscopy; GaAs-InP; SIMS methods; epitaxial layer; inter facial layer; low temperature GaAs/ InP structures; microRaman spectroscopy; microphotoluminescence; Annealing; Epitaxial layers; Gallium arsenide; High speed optical techniques; Indium phosphide; Molecular beam epitaxial growth; Optical buffering; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331152
