Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy

Author

Srnanek, R. ; Irmer, G. ; Záluský, R. ; Dubecký, F. ; Kúdela, R. ; Vincze, A. ; Novotný, I. ; John, J.

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava

fYear

2006

fDate

Oct. 2006

Firstpage

55

Lastpage

58

Abstract

We present diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy, microphotoluminescence and SIMS methods. Bevelled form of the samples was used for the study. The thickness of the epitaxial LT GaAs layer with presence of high density of antisites As_GaAsand As excess was determined. Between InP substrate and LT GaAs layer an inter facial layer composed from InAs, InO and C was detected and studied

Keywords

III-V semiconductors; Raman spectroscopy; epitaxial layers; gallium arsenide; indium compounds; interface structure; photoluminescence; secondary ion mass spectroscopy; GaAs-InP; SIMS methods; epitaxial layer; inter facial layer; low temperature GaAs/ InP structures; microRaman spectroscopy; microphotoluminescence; Annealing; Epitaxial layers; Gallium arsenide; High speed optical techniques; Indium phosphide; Molecular beam epitaxial growth; Optical buffering; Spectroscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331152

Filename

4133076